Mim flux capacitor with thin and thick metal levels

A method of making an integrated circuit, comprising:

• forming a first capacitor electrode in a first metal level over a semiconductor substrate, the first capacitor electrode including a plurality of first lines;
• forming a second capacitor electrode in the first metal level, the second capacitor electrode including a plurality of second lines alternating with the plurality of first metal lines;
• forming a third capacitor electrode in a second metal level over the semiconductor substrate, the third capacitor electrode including a plurality of third lines, each of the third lines located over a first one of the first lines and a first one of the second lines;
• and
• forming a fourth capacitor electrode in the second metal level, the fourth capacitor electrode including a plurality of fourth parallel lines alternating with the plurality of third metal lines, each of the fourth lines located over a second one of the first lines and a second one of the second lines.