Power semiconductor device with solderable power pad
OwnerSusanne Schulte, Scott David Wallace +1inventors
InventorsSusanne Schulte, Scott David Wallace, Oliver Blank
Life of this patent
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Abstract
A power semiconductor device includes a semiconductor substrate. A signal routing structure is disposed above the semiconductor substrate. The signal routing structure comprises a specific metal. A solderable power pad forms a power terminal of the power semiconductor device. The solderable power pad comprises the specific metal. An electrically insulating dielectric passivation layer is disposed between the solderable power pad and the signal routing structure.
Claims21
A power semiconductor device, comprising:
- a semiconductor substrate;
- a signal routing structure disposed above the semiconductor substrate, the signal routing structure comprising a specific metal;
- a solderable power pad forming a power terminal of the power semiconductor device, the solderable power pad comprising the specific metal;
- and
- an electrically insulating dielectric passivation layer disposed between the solderable power pad and the signal routing structure.
A method of manufacturing a power semiconductor device, the method comprising:
- forming a signal routing structure over a semiconductor substrate, the signal routing structure comprising a specific metal;
- forming an electrically insulating dielectric passivation layer over the signal routing structure;
- and
- forming a solderable power pad representing a power terminal of the power semiconductor device over the dielectric passivation layer, the solderable power pad comprising the specific metal.
Dependencies are inferred from the claim text.