Power module for a vehicle

A power module for a vehicle, comprising:

• a first circuit carrier, which has, on a first side, at least one power conductor structure arranged on an electrically insulating layer;
• at least one further circuit carrier, which is arranged spatially parallel to the first circuit carrier and has, on a first side facing the first side of the first circuit carrier, at least one further power conductor structure arranged on an electrically insulating layer, and, on a second side facing away from the first side of the first circuit carrier, at least one control signal conductor structure arranged on the electrically insulating layer;
• and
• at least one semiconductor switch, which has a semiconductor substrate with two power terminals and at least one control terminal, wherein the two power terminals of the at least one semiconductor switch and at least one spacer element are arranged between the at least one power conductor structure of the first circuit carrier and the at least one further power conductor structure of the at least one further circuit carrier in a stack with at least three sinter layers, wherein the at least one control terminal of the semiconductor switch is electrically connected via a connection line to a corresponding contact region of the at least one control signal conductor structure, and wherein the connection line is arranged in a free space and overlaps portions of the stack and the at least one further circuit carrier.

A method for constructing a power module for a vehicle, the method comprising the following steps:

• forming a stack with at least three sinter layers, placing at least one semiconductor switch, which has a semiconductor substrate with two power terminals and at least one control terminal between at least one power conductor structure of a first circuit carrier and at least one further power conductor structure of at least one further circuit carrier onto the at least one power conductor structure of the first circuit carrier and connecting the at least one semiconductor switch to the at least one power conductor structure of the first circuit carrier in a first sintering process;
• placing at least one spacer element onto the at least one semiconductor switch and connecting the at least one spacer element to the at least one semiconductor switch in at least one further sintering process;
• placing the at least one further circuit carrier onto the at least one spacer element and connecting the at least one further circuit carrier to the spacer element via a third sintering process;
• and
• arranging at least one connection line in a free space and electrically connecting the at least one connection line to at least one control terminal of the semiconductor switch and to a corresponding contact region of at least one control signal conductor structure of the at least one further circuit carrier such that portions of the stack and the at least one further circuit carrier are overlapped by the at least one connection line.