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US 2024/0194567 A1Published application
Semiconductor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon Jhy LIAW
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Abstract
A method includes forming a plurality of semiconductor sheets on a front-side of a semiconductive layer; forming a gate strip surrounding each of the semiconductor sheets; forming a plurality of source/drain structures on either side of each of the semiconductor sheets; doping the semiconductive layer with a dopant, the dopant has a same conductivity type as the source/drain structures; forming a power supply voltage line on a back-side of the doped semiconductive layer.
Claims20
A method, comprising:
- forming a plurality of semiconductor sheets on a front-side of a semiconductive layer;
- forming a gate strip surrounding each of the semiconductor sheets;
- forming a plurality of source/drain structures on either side of each of the semiconductor sheets;
- doping the semiconductive layer with a dopant, the dopant has a same conductivity type as the source/drain structures;
- and
- forming a power supply voltage line on a back-side of the doped semiconductive layer.
3 more elements
A method, comprising:
- forming a plurality of nanostructures arranged in a vertical direction on a semiconductor strip on a front-side of a substrate;
- forming a functional gate pattern across the nanostructures from a top view;
- growing epitaxial patterns on opposite sides of the nanostructures;
- performing a planarization process on a back-side of the substrate to expose the semiconductor strip;
- performing an implantation process on the semiconductor strip with a dopant, the dopant has a same conductivity type as the epitaxial patterns;
- and
- forming a power supply voltage line on a back-side of the doped semiconductor strip.
4 more elements
A semiconductor structure, comprising:
- a transistor comprising a channel region, a first gate structure surrounding the channel region, and a plurality of source/drain regions on opposite sides of the first gate structure;
- a doped silicon layer on a back-side of a first one of the source/drain regions and extending along a lengthwise direction of the channel region, the doped silicon layer having a same conductivity type as the source/drain regions;
- a front-side power supply voltage line electrically connecting to a first one of the source/drain regions;
- and
- a back-side power supply voltage line electrically connecting to the doped silicon layer.
2 more elements
Dependencies are inferred from the claim text.