System for survivability of microelectronics in extreme temperature operating environments

A device, comprising:

• a substrate;
• an integrated circuit die designed to function at a high temperature, wherein the integrated circuit die includes one or more high electron mobility transistors (HEMTs) and wherein the integrated circuit die receives signals from the substrate and transmits signals to the substrate;
• a package lid to enclose the integrated circuit die and is disposed on an opposite side of the integrated circuit die from the substrate, wherein the package lid functions as a heatsink;
• and
• an ablative carbon passivation (ACP) thin film that is disposed between the integrated circuit die and the package lid, wherein the ACP thin film ablates in response to elevated temperatures to release thermal energy and redeposits itself on an underside of the package lid.

A method for making a device capable of operating in a high temperature environment, the method comprising:

• fabricating the device as a plurality of layers on a bulk wafer;
• singulating individual usable circuits from the bulk wafer;
• testing the individual usable circuits in expected operating conditions after singulating the individual usable circuits;
• and
• combining the individual usable circuits into one or more microelectronic modules for use in a high temperature environment,
• wherein the device comprises:
• a substrate;
• an integrated circuit die designed to function in the high temperature environment and wherein the integrated circuit die receives signals from the substrate and transmits signals to the substrate;
• a package lid to enclose the integrated circuit die and is disposed on an opposite side of the integrated circuit die from the substrate;
• a thermo-mechanical attachment layer between the integrated circuit die and package lid;
• and
• one or more microfabricated metal pillars.