Method for manufacturing a semiconductor device

Abstract

A method for manufacturing a semiconductor device including a first semiconductor zone optimised for electron conduction and a second semiconductor zone optimised for hole conduction, the method including providing a multilayer structure including a substrate and a silicon-germanium layer disposed on the substrate; defining in the multilayer structure a first region for containing the first semiconductor zone and a second region for containing the second semiconductor zone; subjecting the multilayer structure to laser annealing so as to modify a portion of the multilayer structure located in the first region, the portion including prior to laser annealing a part of the silicon-germanium layer, the portion including after the laser annealing a germanium-depleted part and a germanium-enriched part disposed on the germanium-depleted part, and etching the germanium-enriched part so as to expose the germanium-depleted part.

Dependencies are inferred from the claim text.