Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device, the method comprising:

• forming a semiconductor structure and a dummy structure extending in a first direction on a substrate;
• forming a first insulating layer between the semiconductor structure and the dummy structure;
• forming a first space by removing the dummy structure;
• forming an isolation pattern in the first space;
• forming a main gate sacrificial pattern extending in a second direction crossing the first direction to overlap the semiconductor structure;
• forming second spaces by removing portions of the semiconductor structure at both sides of the main gate sacrificial pattern, and forming source/drain patterns in the second spaces;
• forming a second insulating layer on the source/drain patterns;
• forming a third space by removing the main gate sacrificial pattern, and forming a gate electrode in the third space;
• and
• forming fourth spaces by removing the second insulating layer, and forming, in the fourth spaces, contact structures connected to the source/drain patterns and disposed on both sides of the isolation pattern.