Apparatus with self-aligned connection and related methods

A method of manufacturing a semiconductor device, the method comprising:

• providing a semiconductor substrate configured for housing a data storage cells, wherein the provided semiconductor substrate includes (1) bit lines extending linearly and parallel to each other, (2) a cover layer over each of the bit lines, and (3) trenches separating adjacent pairs of the bit lines and extending below the bit lines;
• depositing a patterning layer over the target bit line, wherein the patterning layer has a mask opening for the target bit line at a target location, the mask opening exposing (1) the cover layer for the corresponding target bit line and (2) portions of the trenches surrounding the target bit line at the target location;
• depositing a controlled amount of a conformal layer over the patterning layer and within the mask opening, wherein depositing the controlled amount of the conformal layer includes forming a conformal depression that is (1) directly over a portion of the corresponding target bit line within the mask opening and (2) concentrically arranged with the mask opening, the portion of the corresponding target bit line, or both;
• forming a contact opening at the target location using the conformal depression, wherein forming the contact opening includes removing the cover layer to expose the target bit line at the corresponding target location;
• and
• forming a vertical connector and a landing pad at the target location based on filling the contact opening with electrically conductive material, wherein the vertical contact is configured to provide a conductive path to the target bit line and includes an upper portion and a lower portion that are concentrically arranged.