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US 2024/0194527 A1Published application
Interlayer for Resistivity Reduction in Metal Deposition Applications
AssigneeApplied Materials, Inc.
InventorsSahil Jaykumar PATEL, Xianyuan ZHAO, Wei LEI, Aixi ZHANG, Yi XU, Yu LEI
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Abstract
Methods and apparatus for processing a substrate are provided. In some embodiments, a method includes depositing an amorphous interlayer atop a first layer on a substrate, wherein the first layer is a metal-containing layer, and depositing a metal layer atop the amorphous interlayer.
Claims20
A method for processing a substrate, comprising:
- depositing an amorphous interlayer atop a first layer on a substrate, wherein the first layer is a metal-containing layer;
- and
- depositing a metal layer atop the amorphous interlayer.
A non-transitory computer readable medium, having instructions stored thereon that, when executed, cause a method for processing a substrate to be performed, the method comprising:
- depositing an amorphous interlayer atop a first layer on a substrate, wherein the first layer is a metal-containing layer;
- and
- depositing a metal layer atop the amorphous interlayer.
A system for processing a substrate, comprising:
- an amorphous interlayer deposition chamber configured to deposit an amorphous interlayer atop a first layer on a substrate, wherein the first layer is a metal-containing layer;
- and
- a metal layer deposition chamber configured to deposit a metal layer atop the amorphous interlayer.
Dependencies are inferred from the claim text.