Substrate processing apparatus and method
AssigneeSemes Co., Ltd.
InventorsSeonggil Lee, Wanjae Park, Dongsub Oh, Myoungsub Noh, Hyejoon Kheel
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Abstract
A substrate processing apparatus includes a plasma space, a processing space, a first gas supplier configured to supply first source gas to the plasma space, and a second gas supplier configured to supply second process gas to the processing space. The first source gas supplies first process gas for etching a first etch target layer in the processing space. The second process gas etches a second etch target layer in the processing space. The first gas supplier and the second gas supplier are separated from each other.
Claims20
A substrate processing apparatus comprising:
- a plasma space;
- a processing space;
- a first gas supplier configured to supply first source gas to the plasma space;
- and
- a second gas supplier configured to supply second process gas to the processing space,
- wherein the first source gas supplies first process gas for etching a first etch target layer in the processing space,
- the second process gas etches a second etch target layer in the processing space, and
- the first gas supplier and the second gas supplier are separated from each other.
A substrate processing apparatus comprising:
- a plasma space;
- a processing space in which a first etch target layer and a second etch target layer are disposed;
- a first gas supplier configured to supply first source gas to the plasma space;
- and
- a second gas supplier configured to supply second source gas to the processing space,
- wherein the first source gas generates first process gas in the plasma space,
- the second source gas supplies second process gas to the processing space,
- the first process gas etches the first etch target layer,
- the second process gas etches the second etch target layer, and
- a degree of etching of the second etch target layer relative to the first etch target layer is adjusted by adjusting a ratio of the second source gas to the first source gas.
A substrate processing method comprising:
- supplying first source gas to a plasma space;
- allowing the first source gas to generate first process gas in the plasma space;
- etching a first etch target layer by supplying the first process gas to a processing space;
- etching a second etch target layer by supplying, to the processing space, second source gas that supplies second process gas;
- and
- adjusting a degree of etching of the second etch target layer relative to the first etch target layer by adjusting a ratio of the second source gas to the first source gas.
Dependencies are inferred from the claim text.