Method of manufacturing conductive structure, method of manufacturing redistribution circuit structure and method of manufacturing semiconductor package

A method of manufacturing a redistribution circuit structure, comprising:

• forming an inter-dielectric layer over a substrate;
• forming a seed layer over the inter-dielectric layer;
• forming a conductive pattern over the seed layer, wherein the seed layer and the conductive pattern comprise a same material, and the conductive pattern is formed by performing an electrolytic plating process with an electrolytic composition comprising:
• a source of copper ions;
• an accelerator agent;
• and
• a suppressor agent, comprising a combination of ethylene oxide (EO) repeat units and propylene oxide (PO) repeat units arranged in a block co-polymer sequence and bonded to a diamine, wherein the ethylene oxide (EO) repeat units are bonded to a nitrogen atom of the diamine, and the molecular weight of the suppressor compound is between about 1000 and about 20,000;
• and
• selectively removing the seed layer exposed by the conductive material to form a seed layer pattern, wherein the conductive pattern and the seed layer pattern form a redistribution conductive pattern.

A method of manufacturing a semiconductor package, comprising:

• providing a carrier having an integrated circuit and a plurality of conductive posts formed thereon;
• encapsulating the integrated circuit and the conductive posts with an insulating encapsulation, wherein the insulating encapsulation exposes at least part of the integrated circuit and at least part of the conductive posts;
• forming a redistribution circuit structure over the insulating encapsulation to electrically connect with the integrated circuit and the conductive posts, comprising:
• forming an inter-dielectric layer over the insulating encapsulation;
• forming a seed layer over the inter-dielectric layer;
• providing a mask having an opening over the seed layer, wherein the opening expose at least part of the seed layer;
• filling a conductive material into the opening by performing an electrolytic plating process with an electrolytic composition comprising:
• a source of copper ions;
• an accelerator agent;
• and
• a suppressor agent, comprising a combination of ethylene oxide (EO) repeat units and propylene oxide (PO) repeat units arranged in a block co-polymer sequence and bonded to an ethylene diamine, wherein the ethylene oxide (EO) repeat units are bonded to a nitrogen atom of the diamine, and a ratio of EO repeat units to the sum of EO repeat units and PO repeat units is between about 0.1 and about 0.6;
• removing the mask to form a conductive pattern;
• removing the seed layer exposed by the conductive pattern to form a seed layer pattern, wherein the conductive pattern and the seed layer pattern form a redistribution conductive pattern;
• and
• removing the carrier.