Substrate and method for manufacturing a substrate
AssigneeAdvanced Semiconductor Engineering, Inc.
InventorsYu-Hung YEH, Bing-Xiu LU, Yu Lin LU, Tai-Yuan HUANG
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Abstract
A substrate includes a dielectric structure, a conductive layer, a first hole and a second hole. The conductive layer is stacked on the dielectric structure. The first hole extends from a top surface of the conductive layer and exposes the dielectric structure. The second hole is spaced apart from the first hole, extends from the top surface of the conductive layer and exposes the dielectric structure. A first depth of the first hole is substantially equal to a second depth of the second hole. An elevation of a topmost end of the first hole is different from an elevation of a topmost end of the second hole.
Claims20
A method for manufacturing a substrate, comprising:
- providing a carrier with a dielectric layer and a conductive layer stacked thereon, wherein the conductive layer has a bottom surface facing the dielectric layer and a top surface;
- detecting the top surface of the conductive layer;
- and
- drilling since the top surface toward the dielectric layer by a predetermined distance no less than a thickness of the conductive layer.
A method for manufacturing a substrate, comprising:
- providing a structure including a first conductive layer and a second conductive layer under the first conductive layer;
- contacting a top surface of the first conductive layer with a drilling tool to determine a first start point;
- drilling since the first start point;
- contacting a top surface of the second conductive layer with the drilling tool to determine a first end point;
- and
- stopping drilling after determining the first end point.
A substrate, comprising:
- a dielectric structure;
- a conductive layer stacked on the dielectric structure;
- a first hole extending from a top surface of the conductive layer and exposing the dielectric structure;
- and
- a second hole spaced apart from the first hole, and extending from the top surface of the conductive layer and exposing the dielectric structure,
- wherein a first depth of the first hole is substantially equal to a second depth of the second hole, and an elevation of a topmost end of the first hole is different from an elevation of a topmost end of the second hole.
Dependencies are inferred from the claim text.