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US 2024/0194490 A1Published application
Surface treatment method, dry etching method, cleaning method, production method for semiconductor device, and etching device
AssigneeCentral Glass Company, Limited
InventorsKunihiro YAMAUCHI, Hikaru KITAYAMA, Akiou KIKUCHI
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Abstract
The present disclosure aims to provide a surface treatment method using a gas composition capable of removing a metal oxide or metal at low temperatures without using plasma. The present disclosure provides a surface treatment method including bringing a gas into contact with a surface of a workpiece, wherein the gas contains a β-diketone, a first additive gas, and a second additive gas, the first additive gas is NO, and the second additive gas is at least one selected from the group consisting of O2 and NO2.
Claims18
1-25. (canceled)
A dry etching method, comprising:
- bringing an etching gas into contact with an etching target film for etching in a non-plasma state, the etching target film being formed on a surface of a workpiece and containing a metal or an oxide of the metal,
- wherein the etching gas contains a β-diketone, a first additive gas, and second additive gas,
- the first additive gas is NO, and
- the second additive gas is at least one selected from the group consisting of O2 and NO2.
1 more element
Dependencies are inferred from the claim text.