Plasma processing method
AssigneeHitachi High-Tech Corporation
InventorsYusuke Nakatani, Yasushi Sonoda, Motohiro Tanaka
Life of this patent
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Abstract
HfO2 is to be selectively laterally etched and to SiGe. In order to manufacture a device in a next generation three-dimensional structure such as GAA, in a plasma processing method that laterally etches HfO2 using a vacuum processing apparatus that is capable of perform radical etching, a flow rate ratio is set such that an SiCl4 gas is added to a BCl3 gas, a flow rate ratio of the SiCl4 gas at this time is lower than a flow rate ratio of the BCl3 gas, and an SiClx deposition to be deposited on SiGe is larger than an SiClx deposition to be deposited on HfO2, and thus HfO2 is selectively etched to SiGe.
Claims6
A plasma processing method that selectively etches HfO2 that is a gate insulating film in a Gate All Around structure to SiGe with plasma,
- wherein the HfO2 is etched using a mixed gas of a BCl3 gas and an SiCl4 gas;
- and
- a flow rate of the SiCl4 gas is smaller than a flow rate of the BCl3 gas.
A plasma processing method that selectively etches HfO2 to SiGe with plasma,
- wherein the HfO2 is etched using a mixed gas of a BCl3 gas and an SiCl4 gas;
- and
- a flow rate of the SiCl4 gas is smaller than a flow rate of the BCl3 gas.
Dependencies are inferred from the claim text.