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AssigneeNXP B.V.
InventorsKuan-Hsiang Mao, Wen Hung Huang, Che Ming Fang, Yufu Liu
Estimating the term…
A method for forming a packaged integrated circuit device includes providing a semiconductor wafer having a plurality of integrated circuit devices, each integrated circuit device extending into the semiconductor wafer to a first depth, and grinding a backside of the silicon wafer to no more than the first depth. The method further includes forming a backside cut between the integrated circuit devices. The backside cut extends to within the first depth, but the backside cut does not extend completely through the semiconductor wafer. The backside cut exposes a plurality of edges of each of the integrated circuit devices. The method further includes depositing, on the backside of the wafer, a metallization layer on a bottom surface of the integrated circuit devices and on the edges.
1-11. (canceled)
An integrated circuit device formed on a semiconductor wafer, the integrated circuit device having a first depth, wherein, prior to singulation of the integrated circuit device from the semiconductor wafer, the integrated circuit device comprises:
A packaged integrated circuit device having a backside metallization layer, the integrated circuit device comprising:
A packaged integrated circuit device comprising:
Dependencies are inferred from the claim text.