Design, control, and optimization of photosensitivity modulation along photoresist film depth
AssigneeApplied Materials, Inc.
InventorsRUIYING HAO, PAOLA DE CECCO, MADHUR SACHAN, KWANGDUK D. LEE, MARTHA SANCHEZ, LUISA BOZANO
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Abstract
Embodiments disclosed herein include a method for forming a photoresist stack. In an embodiment, the method comprises forming a first photoresist layer over a substrate, where the first photoresist layer is formed with a first dry deposition process, and forming a second photoresist layer over the first photoresist layer, where the second photoresist layer is formed with a second dry deposition process that is different than the first deposition process.
Claims20
A method for forming a photoresist stack, comprising:
- forming a first photoresist layer over a substrate, wherein the first photoresist layer is formed with a first dry deposition process;
- and
- forming a second photoresist layer over the first photoresist layer, wherein the second photoresist layer is formed with a second dry deposition process that is different than the first deposition process.
A method of patterning a substrate, comprising:
- depositing a first photoresist layer over the substrate;
- depositing a second photoresist layer over the first photoresist layer, wherein a cross-linking efficiency is different between the first photoresist layer and the second photoresist layer;
- exposing the first photoresist layer and the second photoresist layer to electromagnetic radiation;
- developing the first photoresist layer and the second photoresist layer to provide a patterned photoresist stack;
- and
- transferring a pattern of the patterned photoresist stack into the substrate.
A photoresist stack, comprising:
- a first photoresist layer with a first thickness, wherein the first photoresist layer comprises a first cross-linking efficiency;
- and
- a second photoresist layer over the first photoresist layer, wherein the second photoresist layer comprises a second thickness that is greater than the first thickness and a second cross-linking efficiency that is different than the first cross-linking efficiency.
Dependencies are inferred from the claim text.