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US 2024/0194481 A1Published application
Method of forming thin film using material of chemical purge
AssigneeEGTM Co., Ltd.
InventorsKyu Ho CHO, Jae Min KIM, Ha Na KIM, Ji Yeon HAN, Duck Hyeon SEO, Ju Hwan JEONG, Hyun Ju JUNG
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Abstract
Disclosed is a method of forming a thin film using a chemical purge material, the method comprising supplying a metal precursor to the inside of a chamber oh which a substrate is placed; purging the interior of the chamber; supplying a reactant to the inside of the chamber so that the reactant reacts with the metal precursor to form the thin film; and supplying a chemical purge material to the inside of the chamber so that a portion of the reactant is removed.
Claims10
A method of forming a thin film using a chemical purge material, the method comprising:
- supplying a metal precursor to the inside of a chamber oh which a substrate is placed;
- purging the interior of the chamber;
- supplying a reactant to the inside of the chamber so that the reactant reacts with the metal precursor to form the thin film;
- and
- supplying a chemical purge material to the inside of the chamber so that a portion of the reactant is removed.
2 more elements
Dependencies are inferred from the claim text.