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US 2024/0194478 A1Published application
Apparatus and methods for processing bonding semiconductor wafers
AssigneeTokyo Electron Limited
InventorsSatohiko Hoshino, Scott Lefevre, Yuji Mimura
Life of this patent
Estimating the term…
Abstract
A method for manufacturing semiconductor devices. The method includes placing a semiconductor wafer in a chamber. The method includes applying, in the chamber, a plasma that contains no fluorine. The plasma causes one or more components, in contact with the chamber, that each comprise a fluorinated coating to release its fluorine on a surface of the semiconductor wafer.
Claims20
A method for manufacturing semiconductor devices, comprising:
- placing a semiconductor wafer in a chamber;
- and
- applying, in the chamber, a plasma that contains no fluorine,
- wherein the plasma causes one or more components, in contact with the chamber, that each comprise a fluorinated coating to release its fluorine on a surface of the semiconductor wafer.
1 more element
A method for fabricating semiconductor devices, comprising:
- placing a first semiconductor wafer in a chamber;
- applying, in the chamber, a plasma that contains no fluorine to cause one or more components, in contact with the chamber, that each comprise a fluorinated coating to release its fluorine on a first surface of the first semiconductor wafer;
- placing a second semiconductor wafer in the chamber;
- and
- applying, in the chamber, the plasma to cause the one or more components to again release its fluorine on a second surface of the second semiconductor wafer.
2 more elements
An apparatus for processing semiconductor devices, comprising:
- a chamber configured to house a semiconductor wafer to be bonded;
- wherein the chamber comprises one or more components, in contact with the chamber, that each comprise a fluorinated coating;
- wherein the chamber is further configured to house a plasma containing no fluorine.
Dependencies are inferred from the claim text.