Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A substrate processing apparatus, comprising:

• a process chamber configured to accommodate a substrate;
• a nitrogen-containing gas supplier configured to supply a nitrogen-containing gas into the process chamber;
• an oxygen-containing gas supplier configured to supply an oxygen-containing gas into the process chamber;
• an excitation part configured to excite the gases supplied from the nitrogen-containing gas supplier and the oxygen-containing gas supplier;
• and
• a controller configured to be capable of controlling the nitrogen-containing gas supplier, the oxygen-containing gas supplier, and the excitation part to perform in the process chamber:
• (a) supplying a nitriding species generated by exciting the nitrogen-containing gas to the substrate having a recessed structure formed on a surface of the substrate, nitriding an inner surface of the recessed structure, and modifying at least a portion of the inner surface into a nitride layer;
• and
• (b) supplying an oxidizing species generated by exciting the oxygen-containing gas to the substrate, oxidizing the inner surface including the nitride layer, and modifying the inner surface into an oxide layer,
• wherein (a) includes setting a thickness distribution of the nitride layer in the inner surface such that, in (b), a thickness distribution of the oxide layer in the inner surface becomes a desired distribution.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process in a process chamber of the substrate processing apparatus, the process comprising:

• (a) nitriding an inner surface of a recessed structure formed on a substrate to modify at least a portion of the inner surface into a nitride layer;
• and
• (b) oxidizing the inner surface including the nitride layer to modify the inner surface into an oxide layer,
• wherein (a) includes setting a thickness distribution of the nitride layer in the inner surface such that, in (b), a thickness distribution of the oxide layer in the inner surface becomes a desired distribution.