Sputtering apparatus

A sputtering apparatus comprising:

• a) a first target holder and a second target holder holding a first target and a second target respectively such that surfaces of the first target and the second target face each other;
• b) a substrate holder provided on one side of a plasma generation region which is a region between the first target and the second target respectively held by the first target holder and the second target holder;
• c) a first main magnetic field generation unit and a second main magnetic field generation unit respectively provided on a side of the first target opposite to the plasma generation region and on a side of the second target opposite to the plasma generation region, the first main magnetic field generation unit and the second main magnetic field generation unit being configured to generate a first main magnetic field and a second main magnetic field respectively on surfaces of the first target and the second target, wherein magnets are disposed such that opposite poles face each other;
• d) a power supply configured to generate an electric field in the plasma generation region by applying a predetermined potential to each of the first target holder and the second target holder;
• e) a radio-frequency electromagnetic field generation unit configured to generate a radio-frequency electromagnetic field in the plasma generation region, which is provided on a side of the plasma generation region facing the substrate holder with the plasma generation region between them;
• and
• f) a plasma source gas introduction unit configured to introduce a plasma source gas into the plasma generation region,
• wherein means for generating a magnetic field does not exist at ends of the first target holder and the second target holder on a side of the radio-frequency electromagnetic field generation unit.