Substrate support and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsHajime TAMURA, Yasuharu SASAKI, Shin YAMAGUCHI, Tsuguto SUGAWARA, Katsuyuki KOIZUMI
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Abstract
The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.
Claims13
A substrate support comprising:
- a first region configuring an electrostatic chuck configured to hold a substrate placed thereon;
- a second region surrounding the first region and configured to hold an edge ring placed thereon;
- a first electrode in the first region and configured to receive a first electrical bias;
- a second electrode in at least the second region and configured to receive a second electrical bias;
- and
- a lower electrode including a conductive material and disposed below the electrostatic chuck,
- wherein the second electrode extends below the first electrode to face the first electrode within the first region.
Dependencies are inferred from the claim text.