Substrate support and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsHajime TAMURA, Yasuharu SASAKI, Shin YAMAGUCHI, Tsuguto SUGAWARA, Katsuyuki KOIZUMI
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Abstract
The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.
Claims12
An apparatus for plasma processing comprising:
- a chamber:
- a first bias power source configured to generate a first electrical bias;
- a second bias power source configured to generate a second electrical bias;
- a support configured to support a substrate and an edge ring in the chamber, and having
- a first region configured to hold the substrate placed thereon,
- a second region surrounding the first region and configured to hold the edge ring placed thereon,
- a first electrode in the first region and configured to receive the first electrical bias, and
- a second electrode in the second region and configured to receive the second electrical bias;
- a first electrical path connected between the first bias power source and the first electrode;
- a second electrical path connected between the second bias power source and the second electrode;
- and
- a capacitor connected between the first electrical path and the second electrical path.
Dependencies are inferred from the claim text.