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AssigneeHitachi High-Tech Corporation
InventorsYasushi Sonoda, Motohiro Tanaka, Yusuke Nakatani
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A plasma processing device and method which allow control of a density ratio between ions and radicals, including a processing chamber, a radio frequency power supply which supplies microwave radio frequency power for plasma generation, a magnetic field generating mechanism which generates a magnetic field in the processing chamber, a sample stand disposed in the processing chamber, and a shielding plate disposed above the sample stand for shielding incidence of an ions onto the sample stand. The magnetic field generating mechanism includes a coil disposed around an outer periphery of the processing chamber, and a power supply connected to the coil. The mechanism allows a power supply of the magnetic field generating mechanism or the radio frequency power supply to control a plasma generating position with respect to the shielding plate, and to generate plasma by periodically changing the plasma generating position vertically with respect to the shielding plate.
A plasma processing device comprising:
A plasma processing device comprising:
A plasma processing method using a plasma processing device which includes a processing chamber in which a sample is plasma processed, a radio frequency power supply which supplies microwave radio frequency power for plasma generation, a coil which generates a magnetic field, a power supply which carries current to the coil, a sample stand on which the sample is placed, and a shielding plate disposed above the sample stand for shielding incidence of an ion onto the sample stand, the method comprising a step of periodically changing a position of an electron cyclotron resonance region generated under interaction between the microwave and the magnetic field,
Dependencies are inferred from the claim text.