Atomic layer deposition device using multiple pulses to fill gap of semiconductor structure with high aspect ratio and atomic layer deposition method using the same

An atomic layer deposition device for filling a gap of a semiconductor structure with a high aspect ratio, the atomic layer deposition device comprising:

• a reaction chamber in which a constant reaction space is formed;
• a substrate mounting table which is installed inside the reaction chamber and on which a substrate is placed;
• a gas spray unit configured to spray a precursor and a process gas onto the substrate mounting table;
• a source RF plasma generation unit installed above the reaction chamber and connected to the gas spray unit;
• a bias RF power source unit installed under the reaction chamber, connected to the substrate mounting table, and configured to supply bias RF power;
• and
• a control unit configured to control the ON-OFF of source RF power of the source RF plasma generation unit and bias RF power of the bias RF power source unit.