Substrate processing apparatus

An apparatus for processing a substrate, the apparatus comprising:

• a chamber having a processing space;
• a support unit for supporting a substrate in the processing space;
• a gas supply unit for supplying process gas to the processing space;
• and
• a plasma generation unit for generating plasma from the process gas,
• wherein the plasma generation unit includes:
• an inner coil part including a plurality of inner coils;
• an outer coil part provided to surround the inner coil part when viewed from above and including a plurality of outer coils;
• an upper power source for applying power to the inner coil part and the outer coil part, and
• each of the inner coils and each of the outer coils are provided to be concentric with each other,
• each of the inner coils and the outer coils has:
• a first portion to an nth portion, and
• a first connection portion to an n−1th connection portion, and Nis a natural number equal to or greater than 2,
• the first portion to the nth portion are each provided in a shape of an arc having a different radius with respect to the concentric point,
• the k+1th portion has a radius greater than the kth portion, the kth connection portion connects the kth portion to the k+1th portion, and the k is a natural number equal to or greater than 1 and equal to or less than n−1,
• any one of the first portion and the nth portion has a power terminal to which an electricity line receiving power from the power source is connected,
• the other of the first portion and the nth portion has a ground terminal connected with a ground line, and
• in each of the inner coils and the outer coils, the power terminal and the ground terminal are located on a straight line through the concentric point.