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US 2024/0194444 A1Published application
Ion beam current measurement device and ion beam implantation system
OwnerMoriz Jelinek, Axel König +1inventors
InventorsMoriz Jelinek, Axel König, Bernhard Leitl
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Abstract
An ion beam current measurement device includes a first Faraday cup having a first ion beam entrance slit of a first width W1. The first Faraday cup is configured to generate a first current signal. The device further includes a second Faraday cup having a second ion beam entrance slit of a second width W2. The second Faraday cup is configured to generate a second current signal. The slit widths are designed such that W2 is greater than W1.
Claims20
An ion beam current measurement device, comprising:
- a first Faraday cup having a first ion beam entrance slit of a first width W1, the first Faraday cup being configured to generate a first current signal;
- and
- a second Faraday cup having a second ion beam entrance slit of a second width W2, the second Faraday cup being configured to generate a second current signal,
- wherein W2 is greater than W1.
1 more element
A method of monitoring a process of ion implantation into a substrate, the method comprising:
- measuring first and second current signals generated by first and second Faraday cups having first and second ion beam entrance slits of first and second widths W1 and W2, respectively, wherein W2 is greater than W1;
- and
- calculating a time-dependent slit width change indicator based on the first current signal and the second current signal.
Dependencies are inferred from the claim text.