Stacked integrated passive device

An RF component package, comprising:

• an encapsulated device comprising a plurality of IPD dies in a stacked structure, wherein the device comprises:
• a first IDP die comprising a first silicon carbide (SiC) substrate, the first IPD die having a first surface on the first SiC substrate and a second surface on the first SiC substrate opposite the first surface and comprising a first contact on the first surface and at least one first metal portion on the second surface of the first SiC substrate;
• a second IDP die comprising a second SiC substrate, the second IPD die having a third surface on the second SiC substrate and a fourth surface on the second SiC substrate opposite the third surface and comprising a second contact on the third surface and at least one second metal portion on the fourth surface of the second SiC substrate;
• and
• at least one electrical interconnection structure between one of the first and second surfaces of the first IPD die and one of the third and fourth surfaces of the second IPD die.