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US 2024/0194407 A1Published application
Dielectric material, device including the same, and method of preparing the dielectric material
AssigneeKorea Advanced Institute of Science and Technology
InventorsSung-Yoon CHUNG, Ji-Sang An
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Abstract
Provided are a dielectric material, a device including the same, and a method of preparing the dielectric material. The dielectric material includes a polycrystalline oxide including a plurality of crystal grain bulks and grain boundaries located between the plurality of crystal grain bulks, and the polycrystalline oxide includes an indium dopant in the grain boundaries.
Claims19
A dielectric material comprising
- a polycrystalline oxide including a plurality of crystal grain bulks and grain boundaries located between the plurality of crystal grain bulks,
- wherein the polycrystalline oxide comprises an indium dopant in the grain boundaries.
A method of preparing a dielectric material, the method comprising:
- preparing a polycrystalline oxide powder;
- mixing the polycrystalline oxide powder with an indium dopant precursor to prepare a mixture;
- and
- performing first heat treatment on the mixture in a reducing atmosphere at a temperature of 1300° C. or below to obtain a sintered product.
1 more element
Dependencies are inferred from the claim text.