Nonvolatile memory device, storage device including the same, and method of operating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsChiweon Yoon, Chihyun Kim, Philkyu Kang, Junehong Park, Jayang Yoon, Hyeongdo Choi
Life of this patent
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Abstract
A nonvolatile memory device comprising a charge pump circuit with pump units connected in series that receives an external voltage for charge pumping and outputs a pump voltage in stages according to stage control signals, a switching circuit that controls the charge pump circuit to output pumping voltages in response to switch control signals, a stage controller that outputs the stage control signals and the switch control signals based on a temperature code, and a digital temperature sensor that generates the temperature code.
Claims21
A nonvolatile memory device, comprising:
- a charge pump circuit including pump units connected in series configured to receive an external voltage and to perform a charge pumping operation, and configured to output a pump voltage by forming stages corresponding to the number of pump units connected in series in response to stage control signals;
- a switching circuit configured to control the charge pump circuit to output pumping voltages of the pump units in response to switch control signals;
- a stage controller configured to output the stage control signals and the switch control signals according to a temperature code;
- and
- a digital temperature sensor configured to generate the temperature code.
A method of operating a nonvolatile memory device, the method comprising:
- sensing a temperature by a digital temperature sensor;
- determining a pump stage in response to a temperature code corresponding to the sensed temperature;
- and
- generating a wordline voltage using a pump voltage according to the determined pump stage.
A storage device, comprising:
- at least one nonvolatile memory device;
- and
- a controller configured to control the at least one nonvolatile memory device,
- wherein the at least one nonvolatile memory device includes:
- a plurality of memory blocks including a plurality of memory cells connected to wordlines and bitlines;
- a digital temperature sensor configured to sense a temperature of at least one predetermined region of the at least one nonvolatile memory device and to generate a temperature code;
- and
- a control logic circuit configured to perform an on-chip thermal throttling operation according to the temperature code, and
- wherein the on-chip thermal throttling operation controls timing of a wordline voltage applied to at least one of the wordlines.
21-25. (canceled)
Dependencies are inferred from the claim text.