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US 2024/0194253 A1Published application
Non-volatile static random access memory bit cells with ferroelectric field-effect transistors
AssigneeGlobalFoundries U.S. Inc.
InventorsPirooz Parvarandeh, Venkatesh P. Gopinath, Navneet Jain, Bipul C. Paul, Halid Mulaosmanovic
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Abstract
Structures for a static random access memory bit cell and methods of forming a structure for a static random access memory bit cell. The structure comprises a static random access memory bit cell including a first node and a second node, a first ferroelectric field-effect transistor including a first terminal connected to the first node, and a second ferroelectric field-effect transistor including a second terminal connected to the second node.
Claims20
A structure comprising:
- a static random access memory bit cell including a first node and a second node;
- a first ferroelectric field-effect transistor including a first terminal connected to the first node;
- and
- a second ferroelectric field-effect transistor including a second terminal connected to the second node.
1 more element
A method comprising:
- forming a first ferroelectric field-effect transistor including a first terminal connected to a first node of a static random access memory bit cell;
- and
- forming a second ferroelectric field-effect transistor including a second terminal connected to a second node of the static random access memory bit cell.
Dependencies are inferred from the claim text.