Method for reading memory, a memory, a memory system, and electronic device
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsZhuqin Duan, Xiaojiang Guo
Life of this patent
Estimating the term…
Abstract
A method includes applying a first read voltage to a word line corresponding to a first word line address in a first read request instruction. The method also includes detecting an obtained second read request instruction. The method further includes when the second word line address included in the second read request instruction is the same as the first word line address, applying a second read voltage to the word line corresponding to the first word line address after the end of the application of the first read voltage.
Claims20
A method for reading memory, comprising:
- applying a first read voltage to a word line corresponding to a first word line address in a first read request instruction;
- detecting an obtained second read request instruction;
- and
- when a second word line address included in the second read request instruction is the same as the first word line address, applying a second read voltage to the word line corresponding to the first word line address after an end of application of the first read voltage.
A memory, comprising:
- a memory array including word lines and bit lines;
- and
- a peripheral circuit coupled to the word lines and the bit lines, and configured to:
- apply a first read voltage to a word line corresponding to a first word line address in a first read request instruction;
- detect an obtained second read request instruction;
- and
- when a second word line address included in the second read request instruction is the same as the first word line address, apply a second read voltage to the word line corresponding to the first word line address after an end of application of the first read voltage.
A memory system, comprising:
- a memory comprising:
- a memory array including word lines and bit lines;
- and
- a peripheral circuit coupled to the word lines and the bit lines, and configured to:
- apply a first read voltage to a word line corresponding to a first word line address in a first read request instruction;
- detect an obtained second read request instruction;
- and
- when a second word line address included in the second read request instruction is the same as the first word line address, apply a second read voltage to the word line corresponding to the first word line address after an end of application of the first read voltage;
- and
- a controller coupled to the memory to control the memory to read data.
Dependencies are inferred from the claim text.