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US 2024/0192873 A1Published application
Multi-tier sub-block mode operation
AssigneeSanDisk Technologies LLC
InventorsXiang Yang, Wei Cao, Jiacen Guo
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AssigneeSanDisk Technologies LLC
InventorsXiang Yang, Wei Cao, Jiacen Guo
Estimating the term…
A storage device is disclosed herein. The storage device comprises a non-volatile memory, where the non-volatile memory includes a block of 3N wordlines partitioned into a plurality of sub-blocks. The plurality of sub-blocks include an upper sub-block of a first subset of the block of 3N wordlines, a lower sub-block of a second subset of the block of 3N wordlines, and a middle sub-block of a third subset of the block of 3N wordlines. Further, the storage device comprises control circuitry coupled to the block of 3N wordlines and configured to: perform a program operation in a normal order programming sequence on the upper sub-block; perform a program operation in a reverse order programming sequence on the lower sub-block; and perform a program operation in the reverse order programming sequence on the middle sub-block.
A storage device, comprising:
A method of operating a non-volatile semiconductor memory device, the method comprising:
An apparatus comprising:
Dependencies are inferred from the claim text.