Three-dimensional nand memory device and system and method for performing read operations thereof
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsYuanyuan MIN, HongTao LIU, XiangNan ZHAO, Lei GUAN
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Abstract
The present disclosure provides a memory device that includes memory cells addressed by word lines and bit lines and a peripheral circuit for performing a read operation for the memory device. The peripheral circuit is configured to apply a read voltage to a selected word line and apply a pass voltage to an unselected word line adjacent to the selected word line, wherein a magnitude of the pass voltage is adjusted according to the read voltage applied to the selected word line.
Claims20
A memory device, comprising:
- memory cells addressed by word lines and bit lines;
- and
- a peripheral circuit for performing a read operation for the memory device, the peripheral circuit configured to:
- apply a read voltage to a selected word line;
- and
- apply a pass voltage to an unselected word line adjacent to the selected word line, wherein a magnitude of the pass voltage is adjusted according to the read voltage applied to the selected word line.
A method for performing a read operation for a memory device, the memory device comprising memory cells addressable through word lines and bit lines, the method comprising:
- applying a read voltage to a selected word line;
- applying a pass voltage to an unselected word line adjacent to the selected word line, wherein a magnitude of the pass voltage is adjusted according to the read voltage applied to the selected word line.
A memory system, comprising:
- a memory controller;
- and
- a memory device configured to receive instructions from the memory controller to perform a read operation, the memory device comprising:
- memory cells addressed by word lines and bit lines;
- and
- a peripheral circuit configured to:
- apply a read voltage to a selected word line;
- and
- apply a pass voltage to an unselected word line adjacent to the selected word line, wherein a magnitude of the pass voltage is adjusted according to the read voltage applied to the selected word line.
Dependencies are inferred from the claim text.