Two-dimensional (2d) patterns using multiple exposures of one-dimensional (1d) photolithography masks or holographic interference lithography
AssigneeGoogle Inc.
InventorsLu Tian, Wei Jin, Joseph Daniel Lowney, Thomas Mercier
Life of this patent
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Abstract
Systems and methods are provided for generating a two-dimensional pattern on a photoresist layer. A photoresist layer is exposed via a first exposure to a first unidimensional series of features alternatingly providing first minima and maxima of illumination intensity along a first dimension. The photoresist layer is then exposed via a second exposure to a second unidimensional series of features alternatingly providing second minima and maxima of illumination intensity along a second dimension that is angularly separated from the second dimension by an exposure rotation factor.
Claims20
A method, comprising:
- exposing a photoresist layer via a first exposure to a first unidimensional series of features, wherein the first unidimensional series of features provides alternating first minima and maxima of illumination intensity along a first dimension;
- and
- exposing the photoresist layer via a second exposure to a second unidimensional series of features, wherein the second unidimensional series of features provide alternating second minima and maxima of illumination intensity along a second dimension that is angularly separated from the first dimension by an exposure rotation factor.
A system, comprising:
- a photoresist layer;
- a first unidimensional series of features to provide first minima and maxima of illumination intensity along a first dimension during a first exposure of the photoresist layer;
- and
- a second unidimensional series of features to alternatingly provide second minima and maxima of illumination intensity along a second dimension during a second exposure of the photoresist layer, wherein the second dimension is angularly separated from the first dimension by an exposure rotation factor.
A method, comprising:
- providing, to a photoresist layer via a masking layer interposed between the photoresist layer and a light source, alternating first minima and maxima of illumination intensity along a first dimension;
- and
- providing, to the photoresist layer and via the masking layer, alternating second minima and maxima of illumination intensity along a second dimension that is angularly separated from the first dimension.
Dependencies are inferred from the claim text.