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US 2024/0192590 A1Published application
Apparatus and process for euv dry resist sensitization by gas phase infusion of a sensitizer
AssigneeLam Research Corporation
InventorsSivananda Krishnan Kanakasabapathy, Samantha S.H. Tan, Jengyi Yu, Younghee Lee, Alan J. Jensen, Da Li
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Abstract
The present disclosure relates to stacks having a sensitized resist film, as well as methods and apparatuses for applying such sensitized films. In particular embodiments, the sensitizer can be provided in gas form, and unreacted sensitizer precursors can be recovered after a deposition step.
Claims20
A stack comprising:
- a semiconductor substrate having a top surface;
- and
- a sensitized film disposed on the top surface of the semiconductor substrate, wherein the film comprises an Extreme Ultraviolet (EUV) resist material and an EUV sensitizer dispersed throughout the film.
4-5. (canceled)
A method for forming a sensitized film, the method comprising:
- providing a semiconductor substrate within a chamber;
- and
- delivering an Extreme Ultraviolet (EUV) resist material or a precursor thereof and an EUV sensitizer to the chamber, wherein the EUV resist material or the precursor thereof and the EUV sensitizer can be delivered sequentially in any order or delivered simultaneously, and wherein the EUV resist material or the precursor thereof and the EUV sensitizer are provided in gas form, thereby forming the sensitized film on a top surface of the semiconductor substrate.
11-13. (canceled)
An apparatus for depositing a sensitized film, the apparatus comprising:
- a deposition module comprising a chamber for depositing an Extreme Ultraviolet (EUV) resist material and an EUV sensitizer as a sensitized film, wherein the EUV resist material or a precursor thereof and the EUV sensitizer are provided in gas form;
- a patterning module comprising an EUV photolithography tool with a source of sub-30 nm wavelength radiation;
- a development module comprising a chamber for developing the sensitized film;
- and
- a controller including one or more memory devices, one or more processors, and system control software coded with instructions for conducting film deposition, the instructions comprising instructions for:
- in the deposition module, causing deposition of the sensitized film on a top surface of a semiconductor substrate, wherein the sensitized film comprises the EUV resist material and the EUV sensitizer;
- in the patterning module, causing patterning of the sensitized film with sub-30 nm resolution directly by EUV exposure having a wavelength in the range of about 10 nm to about 20 nm in a vacuum ambient, thereby forming a pattern within the sensitized film;
- and
- in the development module, causing development of the sensitized film to provide the pattern within the sensitized film.
6 more elements
22-23. (canceled)
Dependencies are inferred from the claim text.