Blank mask and photomask using the same

A photomask comprising:

• a light-transmitting substrate;
• and
• a patterned light-shielding film, disposed on the light-transmitting substrate, comprising a first light-shielding layer and a second light-shielding layer disposed on the first light-shielding layer,
• wherein the second light-shielding layer includes at least one of a transition metal, oxygen, or nitrogen, or any combination thereof,
• a reflectance of an upper surface of the patterned light-shielding film with respect to light having a wavelength of 193 nm is 20% or more and 40% or less, and
• a hardness value of the second light-shielding layer is 0.3 kPa or more and 0.55 kPa or less.

A method of manufacturing a semiconductor device, the method comprising:

• arranging a light source, a photomask, and a semiconductor wafer coated with a resist film;
• selectively transmitting and emitting light incident from the light source through the photomask on the semiconductor wafer;
• and
• developing a pattern on the semiconductor wafer,
• wherein the photomask includes a light-transmitting substrate and a patterned light-shielding film disposed on the light-transmitting substrate,
• the patterned light-shielding film includes a first light-shielding layer and a second light-shielding layer disposed on the first light-shielding layer,
• the second light-shielding layer includes at least one of a transition metal and at least one of oxygen and nitrogen,
• a reflectance of an upper surface of the patterned light-shielding film with respect to light having a wavelength of 193 nm is 20% or more and 40% or less, and
• a hardness value of the second light-shielding layer is 0.3 kPa or more and 0.55 kPa or less.