Cross-shaped high-temperature three-dimensional hall sensor and preparation method thereof

A method for preparing a cross-shaped high-temperature three-dimensional Hall sensor, wherein the steps are following:

• S1, material preparation:
• preparing third-generation semiconductor materials, cleaning the materials using acetone, ethanol, deionized water, and hydrochloric acid to remove impurities on the surface of the materials;
• S2, structural etching:
• after developing the third-generation semiconductor materials by photolithography, using inductively coupled plasma etching equipment to etch the third-generation semiconductor materials, to etch both sides to the same depth, and preserve the electron-active region;
• S3, device isolation:
• after photolithography development, using plasma etching or ion implantation to form isolation in the device area;
• S4, electrode fabrication:
• after photolithography development, depositing composite metal by using an electron beam evaporation system, and using rapid thermal annealing to form ohmic contacts on the surface of the third-generation semiconductor materials;
• S5, surface passivation:
• depositing a dielectric layer for device passivation by using any one of electron beam evaporation, magnetron sputtering, plasma-enhanced chemical vapor deposition, or atomic layer deposition;
• S6, window opening:
• after photolithography, etching openings in the passivation layer at the electrode locations using any of magnetron sputtering, electron beam evaporation, or thermal evaporation methods to deposit metal at the electrode locations, and to create solder pads and lead wires.