SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APPARATUS THEREFOR, GaN-BASED CRYSTAL BODY, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
AssigneeKYOCERA Corporation
InventorsToshihiro KOBAYASHI, Takeshi KAMIKAWA, Yuta AOKI, Yuichiro HAYASHI
Life of this patent
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Abstract
A semiconductor substrate includes a main substrate, a mask pattern located above the main substrate and including a mask portion, and a first semiconductor part and a second semiconductor part located above the mask pattern and adjacent to each other, in which the first semiconductor part includes a first lower edge located on the mask portion and a first protruding portion protruding toward the second semiconductor part side farther than the first lower edge.
Claims29
A semiconductor substrate comprising:
- a template substrate including a main substrate, a first seed portion, and a second seed portion,
- a first semiconductor part in contact with the first seed portion and a second semiconductor part in contact with the second seed portion, wherein
- the first semiconductor part and the second semiconductor part include a nitride semiconductor and are adjacent to each other in an a-axis direction of the nitride semiconductor, and
- the first semiconductor part comprises a first lower edge along an m-axis direction of the nitride semiconductor, and a first protruding portion protruding toward the second semiconductor part side farther than the first lower edge.
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A GaN-based crystal body comprising a GaN-based semiconductor and having an upper surface and a lower surface parallel to a (0001) plane, the GaN-based crystal body comprising:
- a lower edge parallel to a <1-100> direction, and a protruding portion protruding in a <11-20> direction farther than the lower edge, wherein
- a non-threading dislocation density in a cross section parallel to a <0001> direction is larger than a threading dislocation density in the upper surface.
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Dependencies are inferred from the claim text.