Method of manufacturing silicon single crystal and method of manufacturing wafer using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHyeyun PARK, Inji LEE
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a silicon single crystal includes preparing a silicon melt and growing the silicon single crystal based on co-doping boron and phosphorus into the silicon melt. The growing of the silicon single crystal includes controlling, a doping concentration ratio, which is a ratio of an initial concentration of phosphorus to an initial concentration of boron, to be a particular ratio and controlling the initial concentration of boron to be within a range of about 8.0E12 atom/cm3 to about 1.5E13 atom/cm3.
Claims20
A method of manufacturing a silicon single crystal, the method comprising:
- preparing a silicon melt;
- and
- growing the silicon single crystal based on co-doping boron and phosphorus into the silicon melt,
- wherein, in the growing of the silicon single crystal, the silicon single crystal is grown based on
- controlling a doping concentration ratio, which is a ratio of an initial concentration of phosphorus to an initial concentration of boron, to be a particular ratio, and
- controlling the initial concentration of boron to be within a range of about 8.0E12 atom/cm3 to about 1.5E13 atom/cm3.
A method of manufacturing a silicon single crystal, the method comprising:
- forming a silicon melt based on melting a polycrystal silicon in a quartz crucible in a chamber;
- controlling resistivity distribution based on co-doping boron and phosphorus into the silicon melt;
- and
- growing the silicon single crystal based on rotating the quartz crucible,
- wherein, in the controlling of the resistivity distribution of the silicon single crystal, the resistivity distribution of the silicon single crystal is controlled based on
- controlling a doping concentration ratio, which is a ratio of an initial phosphorus concentration to an initial concentration of boron, to be a particular ratio, and
- controlling the initial concentration of boron to be within a range of about 8.0E12 atom/cm3 to about 1.5E13 atom/cm3.
A method of manufacturing a wafer, the method comprising:
- growing a silicon single crystal;
- slicing the silicon single crystal;
- lapping the silicon single crystal;
- and
- polishing the silicon single crystal,
- wherein, in the growing of the silicon single crystal, the silicon single crystal is grown based on
- controlling a doping concentration ratio, which is a ratio of an initial concentration of phosphorus to an initial concentration of boron, to be a particular ratio, and
- controlling the initial concentration of boron to be within a range of about 8.0E12 atom/cm3 to about 1.5E13 atom/cm3.
Dependencies are inferred from the claim text.