Interconnect for Solid Oxide Cell (SOC)

A method for preparing a high-temperature resistant interconnect structure for conducting an electrical current comprising the steps of:

• i. providing a ferritic stainless steel substrate having a first and a second face and comprising above 0.1 wt. % silicon;
• ii. applying a first nickel coating onto the first face of the substrate, to obtain an interconnect precursor structure, and
• iii. heating the interconnect precursor structure in the presence of oxygen to obtain the high-temperature resistant interconnect structure for conducting an electrical current, the structure comprising a bulk layer, a first surface layer and a first metal oxide layer, and
• wherein the first surface layer comprises an austenitic phase and a discontinuous silicon oxide phase;
• and
• wherein the first surface layer comprises above 0.1 wt. % silicon and 3-30 wt. % nickel, based on the elemental composition of the surface layer.