Etching method and processing device
AssigneeTokyo Electron Limited
InventorToshio HASEGAWA
Life of this patent
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Abstract
Provided is a method for etching a metal on a substrate, the etching method including (a) a step for exposing the metal to a halogen-containing gas and modifying a surface layer of the metal to be a halide-containing surface layer, (b) a step for exposing the halide-containing surface layer to a gas that contains carbon (C) and oxygen (O) and removing the halide-containing surface layer, and (c) a step for repeating the (a) step and the (b) step in the stated order.
Claims10
An etching method of etching a metal on a substrate, the etching method comprising:
- (a) modifying a surface layer of the metal into a halide-containing surface layer by exposing the metal to a halogen-containing gas;
- (b) removing the halide-containing surface layer by exposing the halide-containing surface layer to a gas containing carbon (C) and oxygen (O);
- and
- (c) repeating the step of (a) and the step of (b) in this order.
A processing device comprising a processing container and a controller that controls a method of etching a metal on a substrate in the processing container,
- wherein the controller controls a process including:
- (a) modifying a surface layer of the metal into a halide-containing surface layer by exposing the metal to a halogen-containing gas;
- (b) removing the halide-containing surface layer by exposing the halide-containing surface layer to a gas containing carbon (C) and oxygen (O);
- and
- (c) repeating the step of (a) and the step of (b) in this order.
Dependencies are inferred from the claim text.