Deposition Of Vanadium-Containing Films
AssigneeVersum Materials US, LLC
InventorsSERGEI V. IVANOV, MICHAEL T. SAVO
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Abstract
The disclosed and claimed subject matter relates to a method for depositing vanadium-containing films including vanadium nitride and vanadium oxynitride. The method generally includes (i) contacting a substrate with vanadium oxytrichloride vapor in a deposition reactor, (ii) purging any unreacted vanadium oxytrichloride with inert gas, (iii) contacting the substrate with a nitrogen containing reactant in a deposition reactor and (iv) purging any unreacted nitrogen containing reactant with inert gas. Additional steps can be included, for example substrate (v) treatment with plasma to remove residual oxygen from oxynitride film
Claims34
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A method for depositing vanadium-containing films comprising the steps of:
- (i) contacting a substrate with vanadium oxytrichloride vapor in a deposition reactor;
- (ii) purging unreacted vanadium oxytrichloride with a first inert gas;
- (iii) contacting the substrate with a nitrogen containing reactant in the deposition reactor;
- (iv) optionally purging unreacted nitrogen containing reactant with a second inert gas;
- and
- (v) optionally treating the substrate with plasma.
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Dependencies are inferred from the claim text.