Precoat method for substrate processing apparatus and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsTaichi MONDEN, Atsushi TANAKA
Life of this patent
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Abstract
A precoat method for a substrate processing apparatus for depositing on a substrate using a raw material gas and a reducing gas is provided. The method includes: a) supplying a fluorine-containing gas into a processing chamber to clean an inside of the processing chamber; b) after a), supplying a reducing gas into the processing chamber to purge the inside of the processing chamber; c) after b), supplying a raw material gas and a reducing gas into the processing chamber to form a precoat film; and d) after c), supplying a reducing gas into the processing chamber to purge the inside of the processing chamber before depositing on a subsequent substrate.
Claims14
A precoat method for a substrate processing apparatus for depositing on a substrate using a raw material gas and a reducing gas, the method comprising:
- a) supplying a fluorine-containing gas into a processing chamber to clean an inside of the processing chamber;
- b) after a), supplying a reducing gas into the processing chamber to purge the inside of the processing chamber;
- c) after b), supplying a raw material gas and a reducing gas into the processing chamber to form a precoat film;
- and
- d) after c), supplying a reducing gas into the processing chamber to purge the inside of the processing chamber before depositing on a subsequent substrate.
A substrate processing apparatus comprising:
- a processing chamber;
- a gas supplier configured to supply a gas into the processing chamber;
- and
- a controller,
- wherein the controller is configured to control the gas supplier to perform:
- a) supplying a fluorine-containing gas into a processing chamber to clean an inside of the processing chamber;
- b) after a), supplying a reducing gas into the processing chamber to purge the inside of the processing chamber;
- c) after b), supplying a raw material gas and a reducing gas into the processing chamber to form a precoat film;
- and
- d) after c), supplying a reducing gas into the processing chamber to purge the inside of the processing chamber before depositing on a subsequent substrate,
- wherein the controller is further configured to control the gas supplier to:
- perform c), in a case where a flow rate of the fluorine-containing gas supplied in a) is higher than a flow rate of the raw material gas supplied in c), and
- stop c), in a case where the flow rate of the fluorine-containing gas supplied in a) is equal to or lower than the flow rate of the raw material gas supplied in c).
Dependencies are inferred from the claim text.