Component for semiconductor production apparatus and method for producing such component
AssigneeAGC Inc.
InventorsRui HAYASHI, Tomonori OGAWA, Koji KAWAHARA
Life of this patent
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Abstract
A component for a semiconductor production apparatus includes a part of polycrystalline silicon carbide (SiC) produced through chemical vapor deposition (CVD), the part being of the component. The part of the polycrystalline SiC includes a first dopant with which the part of the polycrystalline SiC is doped in a range of from 10 atomic concentration in ppm through 10 atomic concentration in % with respect to an entirety of the part. The first dopant includes at least one element selected from the group consisting of aluminum (Al), yttrium (Y), magnesium (Mg), tin (Sn), calcium (Ca), zinc (Zn), cobalt (Co), iron (Fe), nickel (Ni), silver (Ag), and chromium (Cr).
Claims14
A component for a semiconductor production apparatus, the component comprising:
- a part of polycrystalline silicon carbide (SiC) produced through chemical vapor deposition (CVD), the part being of the component, wherein
- the part of the polycrystalline SiC includes a first dopant with which the part of the polycrystalline SiC is doped in a range of from 10 atomic concentration in ppm through 10 atomic concentration in % with respect to an entirety of the part or in a range of more than 10 atomic concentration in % and 30 atomic concentration in % or less with respect to the entirety of the part, and
- the first dopant includes at least one element selected from the group consisting of aluminum (Al), yttrium (Y), magnesium (Mg), tin (Sn), calcium (Ca), zinc (Zn), cobalt (Co), iron (Fe), nickel (Ni), silver (Ag), and chromium (Cr).
A method for producing a component for a semiconductor production apparatus, the method comprising:
- supplying a gas mixture to a surface of a substrate, the gas mixture including a Si source gas, a C source gas, and a source gas for a first dopant, thereby forming a film of polycrystalline SiC through chemical vapor deposition (CVD), the film of the polycrystalline SiC being doped with the first dopant in a range of from 10 atomic concentration in ppm through 10 atomic concentration in % or in a range of more than 10 atomic concentration in % and 30 atomic concentration in % or less, wherein
- the first dopant includes at least one element selected from the group consisting of aluminum (Al), yttrium (Y), magnesium (Mg), tin (Sn), calcium (Ca), zinc (Zn), cobalt (Co), iron (Fe), nickel (Ni), silver (Ag), and chromium (Cr).
Dependencies are inferred from the claim text.