Bias magnetic field control method, control device, and semiconductor process equipment

A control device for a magnetic thin film deposition chamber, comprising:

• one or more processors;
• and
• at least one memory coupled with the one or more processors and containing computer program instructions that, when being executed, cause the one or more processors to:
• determine consumption time length of consuming a material of a target received reaches a first preset time length of consuming the material,
• control a rotation of a bias magnetic field device by a fixed angle along a circumferential direction of a base, and
• repeatedly rotate the bias magnetic field device after every first preset time length of consuming the material of the target, to periodically change an area, where a bias magnetic field is applied to, of a surface of the target until a total time length of consuming the material of the target accumulates to reach an upper limit, wherein
• each time, the bias magnetic field device is rotated in a same direction, and
• each time, a number of substrates is deposited by the material of the target.

A semiconductor process equipment comprising:

• a magnetic thin film deposition chamber comprising:
• a chamber body including a base configured to carry a substrate;
• and
• a target arranged at a top inside the chamber body;
• a bias magnetic field device configured to form a horizontal magnetic field above the base, the horizontal magnetic field being used to deposit a magnetic film layer on the substrate over the base;
• a control device configured to:
• determine a consumption time length of consuming the material of the target reaches a first preset time length of consuming the material,
• control a rotation of a bias magnetic field device by a fixed angle along a circumferential direction of a base, and
• repeatedly rotate the bias magnetic field device after every first preset time length of consuming the material of the target, to periodically change an area, where a bias magnetic field is applied to, of a surface of the target until a total time length of consuming the material of the target accumulates to reach an upper limit, wherein
• each time, the bias magnetic field device is rotated in a same direction, and
• each time, a number of substrates is deposited by the material of the target.