Method for reactive ion etching
AssigneeNational Cheng Kung University
InventorsTse-Ming Chen, Chiu-Hua Huang, Ching-Hua Kao, Yu-Chiang Hsieh
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Abstract
A method for reactive ion etching includes multiple steps of: (a) placing a film to be etched in a vacuum chamber; (b) introducing an etching gas into the vacuum chamber; (c) starting a reactive ion etching to etch the film via the etching gas in a first duration; (d) in a second duration, stopping reactive ion etching and extracting the remaining gas in the vacuum chamber to make the vacuum chamber be in a high-clean state; and (e) repeating step (b) to (d) until an etching depth of the film is reached to a predetermined value.
Claims14
A method for reactive ion etching comprising:
- (a) placing a film to be etched in a vacuum chamber;
- (b) introducing an etching gas into the vacuum chamber;
- (c) starting a reactive ion etching to etch the film via the etching gas in a first duration;
- (d) stopping reactive ion etching and extracting the remaining gas in the vacuum chamber to make the vacuum chamber be in a high-clean state in a second duration;
- and
- (e) repeating the step (b) to (d) until an etching depth of the film is reached to a predetermined value.
A method for reactive ion etching comprising:
- (a) placing a film to be etched in a vacuum chamber;
- (b) introducing an etching gas into the vacuum chamber;
- (c) starting a reactive ion etching to etch the film via the etching gas in a first duration;
- (d) stopping reactive ion etching and moving the film to another vacuum chamber in a high-clean state in a second duration;
- and
- (e) repeating step (b) to (d) until an etching depth of the film is reached to a predetermined value.
Dependencies are inferred from the claim text.