Semiconductor component and method for manufacturing a semiconductor component
OwnerGregor Schuermann, Pascal Gieschkeinventors
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Abstract
A semiconductor component. The semiconductor component has a semiconductor substrate, an insulation layer, and a first monocrystalline silicon layer. The insulation layer is arranged on the semiconductor substrate, and the first monocrystalline silicon layer is arranged on the insulation layer and at least one first region that extends starting from the first monocrystalline silicon layer up to a surface of the semiconductor substrate. The at least one first region includes second monocrystalline silicon.
Claims11
1-10. (canceled)
A semiconductor component, comprising:
- a semiconductor substrate;
- an insulation layer;
- and
- a first monocrystalline silicon layer, wherein the insulation layer is arranged on the semiconductor substrate and the first monocrystalline silicon layer is arranged on the insulation layer, and at least one first region that extends starting from the first monocrystalline silicon layer up to a surface of the semiconductor substrate;
- wherein the at least one first region includes a second monocrystalline silicon.
A method for manufacturing a semiconductor component having a semiconductor substrate, an insulation layer and a monocrystalline silicon layer, wherein the insulation layer is arranged on the semiconductor substrate, and the first monocrystalline silicon layer is arranged on the insulation layer and at least one first region, which extends starting from the first monocrystalline silicon layer up to a surface of the semiconductor substrate, the method comprising the following steps:
- at least partially filling the at least one first region with a second monocrystalline silicon by epitaxy.
Dependencies are inferred from the claim text.