Three-dimensional memory devices and methods for forming the same
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsCuicui Kong, Kun Zhang, Yuhui Han, Linchun Wu, Shuangshuang Wu, Zhiliang Xia, Zongliang Huo, Jingtao Xie, Bingjie Yan, Di Wang, Wenxi Zhou
Life of this patent
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Abstract
In certain aspects, a three-dimensional (3D) memory device includes channel structures in a first region, word line pick-up structures in a second region, and word lines each extending from the first region into at least a portion of the second region. At least one word line pick-up structure includes multiple sections each electrically connected to a different word line.
Claims20
A three-dimensional (3D) memory device, comprising:
- channel structures in a first region;
- word line pick-up structures in a second region;
- and
- word lines each extending from the first region into at least a portion of the second region,
- wherein at least one word line pick-up structure comprises multiple sections each electrically connected to a different word line.
A method for forming a three-dimensional (3D) memory device, comprising:
- forming a stack structure comprising interleaved first dielectric layers and second dielectric layers, wherein the first dielectric layers comprise a first dielectric material and the second dielectric layers comprise a second dielectric material;
- forming channel structures extending through the first dielectric layers and the second dielectric layers in a first region of the stack structure;
- and
- forming word line pick-up structures extending through the first dielectric layers and the second dielectric layers in a second region of the stack structure, wherein at least one word line pick-up structure comprises multiple sections each reaching different depths in the second region of the stack structure.
A system, comprising:
- a three-dimensional (3D) memory device configured to store data, the 3D memory device comprising:
- channel structures in a first region;
- word line pick-up structures in a second region;
- and
- word lines each extending from the first region into at least a portion of the second region,
- wherein at least one word line pick-up structure comprises multiple sections each electrically connected to a different word line;
- and
- a memory controller electrically connected to the 3D memory device and configured to operate the channel structures through the word lines.
Dependencies are inferred from the claim text.