Method for manufacturing semiconductor structure and semiconductor structure

A method for manufacturing a semiconductor structure, comprising:

• providing a base;
• forming a plurality of stack structures on a surface of the base and forming a plurality of first isolation layers, wherein the plurality of stack structures are spaced apart from each other along a first direction, the plurality of first isolation layers are arranged between the plurality of stack structures adjacent to each other, wherein the plurality of stack structures comprises a plurality of first interlayer dielectric layers, a plurality of initial active layers and a plurality of second interlayer dielectric layers;
• etching portion of each initial active layer to form a first trench in each initial active layer;
• forming a plurality of oxide semiconductor layers in a plurality of first trenches, wherein each of the plurality of oxide semiconductor layers is in contact with a remaining portion of a respective one of the plurality of initial active layers;
• and
• etching portions of the plurality of oxide semiconductor layers and remaining portions of the plurality of initial active layers to form a plurality of active structures arranged in an array along the first direction and a second direction,
• wherein each of the plurality of first trenches extends along a third direction,
• wherein the first direction is perpendicular to the surface of the base, the second direction is parallel to the surface of the base, and the third direction is parallel to the surface of the base and is perpendicular to the second direction.