Solid-state imaging element

Abstract

To improve image quality in a solid-state imaging element that simultaneously performs exposure in all pixels. The solid-state imaging element includes a predetermined number of capacitive elements, a pre-stage circuit, a selection circuit, a post-stage circuit, and a vertical scanning circuit. The pre-stage circuit generates a predetermined reset level and a signal level corresponding to an exposure amount, and causes each of the capacitive elements to hold a corresponding one of the reset level and the signal level. In the selection circuit, a selection transistor that opens and closes a path between one end of each capacitive element and a predetermined node is arranged. The post-stage circuit sequentially reads the reset level and the signal level via the node. The vertical scanning circuit performs control to lower the potential of the one end when the reset level and the signal level are held.

Dependencies are inferred from the claim text.